Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Resonant tunnelling and intersubband absorption in AlN - GaN superlattices

: Baumann, E.; Giorgetta, F.R.; Hofstetter, D.; Wu, H.; Schaff, W.J.; Eastman, L.F.; Kirste, L.


Physica status solidi. C 2 (2005), Nr.3, S.1014-1018
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Fraunhofer IAF ()

We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons.