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2007
Conference Paper
Titel
High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm
Abstract
High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 µm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 µm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in a GaSb-based VECSEL with an intracavity diamond heatspreader. The tuning characteristics of the VECSEL is also studied.
Author(s)