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High-power, high-brightness, tunable GaSb-based VECSEL at 2.X µm

: Rattunde, M.; Schulz, N.; Ritzenthaler, C.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Kemp, A.J.; Maclean, A.J.; Dawson, M.D.; Burns, D.


Institute of Electrical and Electronics Engineers -IEEE-:
CLEO Europe - IQEC 2007. Conference digest. CD-ROM : Munich, Germany, 17 - 22 June
Piscataway, NJ: IEEE, 2007
ISBN: 1-4244-0931-4
ISBN: 978-1-4244-0931-0
1 S.
Conference on Lasers and Electro-Optics Europe (CLEO Europe) <2007, München>
International Quantum Electronics Conference (IQEC) <2007, München>
Fraunhofer IAF ()

High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 µm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 µm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in a GaSb-based VECSEL with an intracavity diamond heatspreader. The tuning characteristics of the VECSEL is also studied.