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AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

: Hofstetter, D.; Baumann, E.; Giorgetta, F.R.; Maier, M.; Guillot, F.; Bellet-Amalric, E.; Monroy, E.


Morkoc, H. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Gallium nitride materials and devices III. Proceedings : 21 - 24 January 2008, San Jose, California, USA
Bellingham, WA: SPIE, 2008 (SPIE Proceedings 6894)
ISBN: 978-0-8194-7069-0
Paper 68940S
Conference on GaN Materials and Devices <3, 2008, San Jose/Calif.>
Fraunhofer IAF ()

We report on the fabrication and characterization of GaN/AlN based superlattice structures with intersubband transition wavelengths in the optical telecom range. The devices consist typically of 40 periods of 1.5 nm thick Si-doped GaN wells and up to 15 nm thick AlN barriers. The photovoltaic mode of operation has allowed us to test these detectors at room temperature and for frequencies ranging into the multiple GHz region. Substantial performance improvements are expected if proper high frequency mounting and processing techniques will be used in the future.