Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Terahertz GaAs/AlGaAs- and InGaAs-based bow-tie diodes: Spectral features and applications for imaging

 
: Kasalynas, I.; Seliuta, D.; Tamosiunas, V.; Macutkevic, J.; Balakauskas, S.; Valusis, G.; Köhler, K.

:

Institute of Physics -IOP-, London:
16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2009 : 24-28 August 2009, Montpellier, France
Bristol: IOP Publishing, 2009 (Journal of physics. Conference series 193.2009)
ISSN: 1742-6588
Art. 012077, 5 S.
International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON) <16, 2009, Montpellier>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
Spectral features of broadband bow-tie diodes fabricated of InGaAs layers and modulation doped GaAs/AlGaAs structures are discussed. It is shown that sensitivity of both GaAs/AlGaAs- and InGaAs-based sensors at room temperature weakly depends on frequency in the range 0.01-1.0 THz; the sensitivity is found to be 0.3 V/W and 10 V/W, respectively. The InGaAs bow tie diodes coupled with silicon lenses are demonstrated in terahertz imaging application, their feasibility for real-time THz imaging is considered as well.

: http://publica.fraunhofer.de/dokumente/N-169858.html