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Reliability of AlGaN/GaN HEMTs under DC- and RF-operation

Zuverlässigkeit von AlGaN/GaN HEMTs unter DC- und RF-Betrieb
: Dammann, Michael; Cäsar, M.; Waltereit, Patrick; Bronner, Wolfgang; Konstanzer, Helmer; Quay, Rüdiger; Müller, Stefan; Mikulla, Michael; Ambacher, O.; Wel, P. van der; Rödle, T.; Behtash, R.; Bourgeois, F.; Riepe, K.

Joint Electron Device Engineering Council -JEDEC-, Committee on GaAs Reliability and Quality Standards; IEEE Electron Devices Society:
Reliability of Compound Semiconductors Digest, ROCS Workshop 2009. Proceedings : October 11, 2009, Greensboro, North Carolina
New York, NY: IEEE, 2009
ISBN: 0-7908-0124-8
ISBN: 978-0-7908-0124-7
Reliability of Compound Semiconductors Workshop (ROCS) <2009, Greensboro/NC>
Fraunhofer IAF ()
AlGaN/GaN HEMT; reliability; trap; HTRB step stess test; gate leakage current; Zuverlässigkeit; Störstelle; HTRB Stufen stress test; Gate Leckströme; HEMT; device reliability; FET; DC-operation; RF-operation; Bauelementzuverlässigkeit; DC-Betrieb; HF-Betrieb

In this work, device reliability under DC- and RF-operation at high temperatures ranging from 140°C to 200°C and at high drain voltage of 50 V has been achieved by improving the gate metal processing technology. It will be shown by long term stress tests that the gate processing technology is the key to improve the stability of the gate leakage current. The short term drain voltage robustness under off state condition has been examined by a DC-voltage-step-stress test. At the maximum drain voltage of 130 V the gate and drain current densities remain below 0.1 mA/mm. First RF stress test of a 2.4 mm power FETs at 2 GHz also shows little degradation.