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Optical properties of InGaAsN/GaAs quantum well and quantum dot structures for longwavelength emission

 
: Volovik, B.V.; Kovsh, A.R.; Passenberg, W.; Kuenzel, H.; Musikhin, Yu.G.; Odnoblyudov, V.A.; Ledentsov, N.N.; Bimberg, D.; Ustinov, V.M.

8th International Symposium on Nanostructures: Physics and Technology : St. Petersburg, June 19-23, 2000
2000
ISBN: 5-936340-02-3
S.148-151
International Symposium on Nanostructures <8, 2000, St. Petersburg>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
Optical properties of InGaAsN/GaAs quantum well and quantum dot structures were investigated. It was found that longwavelength emission from InGaAsN structures using relatively small N concentrations lead to a significant increase in the photoluminescence intensity. Transmission electron microscopy confirmed the formation of quantum dots for the case of higher indium concentrations.

: http://publica.fraunhofer.de/dokumente/N-169813.html