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2000
Conference Paper
Titel
High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( = 1.53 m) laser diodes
Abstract
A cost-effective surface-implantation technique was developed for the on-wafer fabrication of short pulse InGaAsP/InP laser diodes. The achievement of 20 ps/1 W peak power at high yield with these devices shows a promising alternative to solid-state-laser solutions.