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All-active tapered 1550 nm InGaAsP-BH-FP lasers for uncooled 10 Gb/s operation

 
: Möhrle, M.; Sigmund, A.; Mörl, L.; Roehle, H.; Suna, A.; Jacumeit, G.; Bornholdt, C.; Reier, F.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 18th International Semiconductor Laser Conference 2002
Piscataway, NJ: IEEE, 2002
ISBN: 0-7803-7598-X
S.97-98
International Semiconductor Laser Conference (ISLC) <18, 2002, Garmisch-Partenkirchen>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
All-active tapered 10 Gb/s-1550 nm InGaAsP-BH-FP lasers were developed. 400 m long as-cleaved devices showed low threshold current, high output power and uncooled 10 Gb/s operation up to at least 70°C. At 100mA operation current a bandwidth of more than 7 GHz was obtained up to 85 °C heat-sink temperature.

: http://publica.fraunhofer.de/dokumente/N-169768.html