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Planarized selective regrowth of InP:FE by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices

: Paraskevopoulos, A.; Franke, D.; Harde, P.; Gouraud, S.; Pallec, M. le; Lelarge, F.; Decobert, J.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
16th International Conference on Indium Phosphide and Related Materials, IPRM 2004. Proceedings : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Japan
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8595-0
International Conference on Indium Phosphide and Related Materials (IPRM) <16, 2004, Kagoshima>
Fraunhofer HHI ()

Planarization of semi-insulating InP by TBCl assisted LP-MOVPE has been achieved on high (> 5 m) ridges. Full planarization at the whole width between adjacent ridges was obtained for various epitaxial conditions and independent form the ridge form. Fabrication of first modulator devices confirms the high potential of this technique for the development of high-speed optoelectronic components.