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High speed AlGaInAs multiple-quantum-well electroabsorption modulator buried and planarized with semi-insulating Fe-doped InP grown by chloride assisted LP-MOVPE

: Gouraud, S.; Cuisin, M.-C.; Kazmierski, C.; Decobert, J.; Alexandre, F.; Blache, F.; Paraskevopoulos, A.; Franke, D.


Institute of Electrical and Electronics Engineers -IEEE-:
International Conference on Indium Phosphide and Related Materials 2005 : May 8 - 12, 2005, Glasgow, Scotland
Piscataway, NJ: IEEE Operations Center, 2005
ISBN: 0-7803-8891-7
ISBN: 978-0-7803-8891-8
International Conference on Indium Phosphide and Related Materials (IPRM) <17, 2005, Glasgow/UK>
Fraunhofer HHI ()

Buried Heterostructure (BH) Electroabsorption (EA) modulators completely grown by LP-MOVPE present advantages of robust single mode and better thermal behavior over standard ridge structures. However, without special care, strong morphological difficulties after MOVPE regrowth and high leakage current with excess junction capacitance are often observed forbidding early technological steps in the fabrication process or the realization of reliable components. To this aim, Fe-doped InP grown by TBCl assisted LP-MOVPE has been studied and applied to bury AlGaInAs MQW based EAM. Successful regrowth interface treatments as well excellent regrowth morphologies were routinely accomplished and 40 Gbit/s SIBH-EAM were fabricated and evaluated.