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Quantum dot based photonic devices at 1.3 m: Direct modulation, mode-locking, SOAs and VCSELs

: Laemmlin, M.; Fiol, G.; Kuntz, M.; Hopfer, F.; Mutig, A.; Ledentsov, N.N.; Kovsh, A.R.; Schubert, C.; Jacob, A.; Umbach, A.; Bimberg, D.


Physica status solidi. C 3 (2006), Nr.3, S.391-394
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <32, 2005, Rust>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()

We present results on directly modulated lasers with high-reflectivity coating, mode-locked lasers with a gain and absorber section, and semiconductor optical amplifiers (SOA) with anti-reflection coating, all based on InGaAs/GaAs quantum dot (QD) material emitting at 1.3 m. Error free 8 and 10 Gb/s data modulation is presented. 80 GHz passive mode-locking of two-section QD lasers is reported. Hybrid mode-locking was achieved at 40 GHz. The minimum pulse width at 80 GHz was 1.5 ps, with a time-bandwidth product of 1.7. QD SOAs are shown to have a chip gain larger than 26 dB. Modeling of the gain characteristics of these devices predicts 40 dB amplification under ideal biasing and input power. QD-VCSEL with 17 p-modulation doped QD layers placed in 5 field intensity antinodes and fully doped GaAs/AlGaAs DBRs show a peak multimode RT cw output power of 1.8 mW and differential efficiency of 20 %. The maximum -3dB bandwidth is 3 GHz.