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III/V wafer bonding technology for wafer-level fabrication of GaInAsP/InP microring resonators

 
: Dragoi, V.; Mittendorfer, G.; Thanner, C.; Lindner, P.; Alexe, M.; Pintilie, L.; Hamacher, M.; Heidrich, H.

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National Institute for Research and Development in Microtechnologies, Bucharest:
International Semiconductor Conference, CAS 2006. Vol. 1
Piscataway, NJ: IEEE Operations Center, 2007
ISBN: 1-424-40109-7
S.129-132
International Semiconductor Conference <29, 2006, Sinaia/Romania>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.

: http://publica.fraunhofer.de/dokumente/N-169624.html