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Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode
|Institute of Electrical and Electronics Engineers -IEEE-:|
22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010. CD-ROM : May 31 2010-June 4 2010, Takamatsu Symbol Tower, Kagawa, Japan
New York, NY: IEEE, 2010
|International Conference on Indium Phosphide and Related Materials (IPRM) <22, 2010, Kagawa/Japan>|
|Fraunhofer HHI ()|
1490nm surface emitting BH-DFB-laser diodes incorporating a 45° turning mirror and an integrated monitor photodiode are presented for the first time. The devices show VCSEL-like threshold currents of as low as 3...7mA in the operation temperature range between 20°C and 90°C and a modulation bandwidth of >8GHz. The integrated monitor diode operates temperature independent and is therefore well suited for laser power control.