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SWOP - Charge carrier depth profiling of boron doped single crystalline silicon

: Philipp, P.; Schmidt, B.; Zier, M.; Ogiewa, M.


Matsuo, J.:
Ion implantation technology 2010 : 18th International Conference on Ion Implantation Technology, IIT 2010, Kyoto, Japan, 6 - 11 June 2010
2010 (AIP Conference Proceedings 1321)
ISBN: 978-0-7354-0876-0
ISSN: 0094-243X
International Conference on Ion Implantation Technology (IIT) <18, 2010, Kyoto>
Fraunhofer CNT ()

The Stepwise Oxidation Profiling technique is applied to boron doped single crystalline silicon. The procedure works by altering between electrical sheet resistance measurements and Si consumption by electrochemical anodic oxidation. The fabrication of planar van-der-Pauw structures was introduced. It was shown that the SWOP profiles are matching well with SIMS reference measurements, and a depth resolution of 1 nm and a detection limit of 1×10 16cm-3 was achieved.