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Crystalline silicon thin-film solar cells on ZrSiO/sub4/ ceramic substrates

: Kieliba, T.; Bau, S.; Schober, R.; Osswald, D.; Reber, S.; Eyer, A.; Willeke, G.


Solar energy materials and solar cells 74 (2002), Nr.1-4, S.261-266
ISSN: 0927-0248
Fraunhofer ISE ()
crystalline silicon thin-film solar cell; ceramic substrate; low-cost substrate; zirconium silicate; cost; atmospheric pressure CVD; barrier layer; multicrystalline grain structure; zone melting recrystallization; coarse-grained film; efficiency; short circuit current density; effective diffusion length; internal quantum efficiency measurement

The development of a low-cost substrate is one of the major technological challenges for crystalline Si thin-film solar cells. Zirconium silicate (ZrSiO/sub 4/) ceramics is a material which can meet the demanding physical requirements as well as the cost goals. Thin microcrystalline Si films were deposited by atmospheric pressure CVD on ZrSiO/sub 4/-based ceramic substrates coated with barrier layers. The Si film was transferred into a multicrystalline grain structure by zone- melting recrystallization (ZMR). Film growth was analyzed in situ and correlated with substrate and barrier layer properties. Thin-film solar cells were fabricated from selected coarse-grained films. The best solar cell achieved an efficiency of 8.3% with a short circuit current density of 26.7 mA/cm/sup 2/. The effective diffusion length obtained from internal quantum efficiency measurements was about 25 mu m.