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A computationally efficient method for three-dimensional simulation of ion implantation

Eine rechenzeiteffiziente Methode für die dreidimensionale Simulation


Institute of Electrical and Electronics Engineers -IEEE-:
SISPAD '99. Proceedings
Piscataway, NJ: IEEE, 1999
ISBN: 4-930813-98-0
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <4, 1999, Tokyo>
Fraunhofer IIS B ( IISB) ()
3D process simulation; ion implantation; Monte Carlo; point response

A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested in this work. The method is based on a combination of the algorithmic capabilities of the analytical and Monte-Carlo simulation methods. The Monte-Carlo method was used to generate a three-dimensional point response distribution function for the given implantation conditions. Using the numerically generated point response and an efficient algorithm for 3D convolution a point response based interface between the Monte-Carlo and analytical simulation methods was established. The combined simulation approach is able to accurately account for the channeling effect which is especially strong in case of a normal implantation into crystalline silicon. The combined simulation approach was implemented in the software for three-dimensional simulation of ion implantation and showed a reduction of the simulation time by a factor 10 and more compared to full scale Monte-Carlo simulation without sacrificing the simulation accuracy.