Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Inhibition of enhanced Cu oxidation on ruthenium

: Ding, S.-F.; Xie, Q.; Waechtler, T.; Lu, H.-S.; Schulz, S.E.; Qu, X.-P.


Institute of Electrical and Electronics Engineers -IEEE-:
International Interconnect Technology Conference, IITC 2010 : 6-9 June 2010, Burlingame, CA (USA)
New York, NY: IEEE, 2010
ISBN: 978-1-4244-7676-3
3 S.
International Interconnect Technology Conference (IITC) <2010, Burlingame/Calif.>
Fraunhofer ENAS ()

The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.