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Inhibition of enhanced Cu oxidation on ruthenium

 
: Ding, S.-F.; Xie, Q.; Waechtler, T.; Lu, H.-S.; Schulz, S.E.; Qu, X.-P.

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Institute of Electrical and Electronics Engineers -IEEE-:
International Interconnect Technology Conference, IITC 2010 : 6-9 June 2010, Burlingame, CA (USA)
New York, NY: IEEE, 2010
ISBN: 978-1-4244-7676-3
3 S.
International Interconnect Technology Conference (IITC) <2010, Burlingame/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer ENAS ()

Abstract
The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.

: http://publica.fraunhofer.de/dokumente/N-167539.html