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Influence of copper on the catalytic carbon nanotube growth process

: Fiedler, H.; Hermann, S.; Schulz, S.E.; Gessner, T.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 14th International Interconnect Technology Conference and Materials for Advanced Metallization, IITC/MAM 2011 : Dresden, Germany, 8 - 12 May 2011
New York, NY: IEEE, 2011
ISBN: 978-1-4577-0503-8
ISBN: 978-1-4577-0501-4
ISBN: 1-4577-0501-X
ISBN: 978-1-4577-0502-1
International Interconnect Technology Conference (IITC) <14, 2011, Dresden>
Materials for Advanced Metallization Conference (MAM) <20, 2011, Dresden>
Fraunhofer ENAS ()

For Cu/carbon nanotube(CNT) hybrid interconnect technology the growth of CNTs on a conductive substrate connected to Cu lines is required. CNTs were grown by catalytic chemical vapour deposition and the effect of a Cu layer beneath was investigated. By electron energy loss spectroscopy (EELS) we found the Cu to diffuse into the catalyst. This influences CNT growth. Therefore, incorporation of a sufficient diffusion barrier between the Cu layer and the substrate is required. As diffusion barriers we used Ta and TaN.