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Analytical model for p-n junctions under point source illumination

: Blanco-Filgueira, B.; López, P.; Döge, J.

Postprint urn:nbn:de:0011-n-1634626 (797 KByte PDF)
MD5 Fingerprint: bf63d2156211d42bb047ad2d7b286664
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Erstellt am: 31.5.2011

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Circuits and Systems Society:
IEEE International Conference on Electronic, Circuits, and Systems, ICECS 2010. Proceedings : Athens, Greece, 12. - 15.12.2010
New York, NY: IEEE, 2011
ISBN: 978-1-4244-8155-2
ISBN: 978-1-4244-8157-6
International Conference on Electronic, Circuits, and Systems (ICECS) <17, 2010, Athens>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) ()
image sensors; photodiodes; modeling

An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.