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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Analytical model for p-n junctions under point source illumination
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Postprint urn:nbn:de:0011-n-1634626 (797 KByte PDF) MD5 Fingerprint: bf63d2156211d42bb047ad2d7b286664 © 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Erstellt am: 31.5.2011 |
| Institute of Electrical and Electronics Engineers -IEEE-; IEEE Circuits and Systems Society:
IEEE International Conference on Electronic, Circuits, and Systems, ICECS 2010. Proceedings : Athens, Greece, 12. - 15.12.2010
New York, NY: IEEE, 2011
ISBN: 978-1-4244-8155-2
ISBN: 978-1-4244-8157-6
S.906-909 |
| International Conference on Electronic, Circuits, and Systems (ICECS) <17, 2010, Athens> |
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| Englisch |
| Konferenzbeitrag, Elektronische Publikation |
| Fraunhofer IIS, Institutsteil Entwurfsautomatisierung (EAS) () |
| image sensors; photodiodes; modeling |
Abstract
An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.