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ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

: Waechtler, T.; Ding, S.-F.; Hofmann, L.; Mothes, R.; Xie, Q.; Oswald, S.; Detavernier, C.; Schulz, S.E.; Qu, X.-P.; Lang, H.; Gessner, T.


Travaly, Y.:
International Workshop on "Materials for Advanced Metallization", MAM 2010 : Mechelen (Malines), Belgium, was held from March 7th to March 10th
Amsterdam: Elsevier, 2011 (Microelectronic engineering 88.2011, Nr.5)
ISSN: 0167-9317
International Workshop on Materials for Advanced Metallization (MAM) <19, 2010, Mechelen/Belgium>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer ENAS ()

The deposition of Cu seed layers for electrochemical Cu deposition (ECD) via atomic layer deposition (ALD) of copper oxide and subsequent thermal reduction at temperatures between 110 and 120 degrees C was studied on different diffusion barrier systems. While optimization of the process is required on TaN with respect to reduction and plating, promising results were obtained on blanket PVD Ru. The plating results on layers of ALD Cu with underlying Ru even outperformed the ones achieved on PVD Cu seed layers with respect to morphology and resistivity. Applying the processes to via and line patterns gave similar results, suggesting that a combination of ALD Cu with PVD or ALD-grown Ru could significantly improve the ECD Cu growth.