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Structural and optical characterization of Si quantumdots in a SiC matrix

: Kuenle, M.; Löper, P.; Rothfelder, M.; Janz, S.; Nickel, K.-G.; Eibl, O.

Volltext urn:nbn:de:0011-n-1610843 (827 KByte PDF)
MD5 Fingerprint: 2c340b8461b46541a86478db382d7c60
Erstellt am: 20.12.2014

Winterer, M. ; Materials Research Society -MRS-:
Photovoltaics and optoelectronics from nanoparticles : Symposium held April 5 - 9, 2010, San Francisco, California; Symposium T, "Photovoltaics and Optoelectronics from Nanoparticles" held as part of the 2010 MRS spring meeting
Warrendale, Pa.: MRS, 2010 (Materials Research Society Symposium Proceedings 1260)
ISBN: 978-1-605-11237-4
ISSN: 0272-9172
Symposium T "Photovoltaics and Optoelectronics from Nanoparticles" <2010, San Francisco/Calif.>
Materials Research Society (Spring Meeting) <2010, San Francisco/Calif.>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Farbstoff-; Organische und Neuartige Solarzellen; Tandemsolarzellen auf kristallinem Silicium; Kristalline Silicium- Dünnschichtsolarzellen

Amorphous hydrogenated Si1-xCx / SiC multilayers consisting of alternating Si1-xCx and stoichiometric SiC layers were prepared using Plasma Enhanced Chemical Vapour Deposition (PECVD). Annealing at temperatures up to 1100°C was done targeting the size controlled crystallization of Si nanocrystals (NCs) in a SiC matrix. The influence of annealing temperature on the nanostructure of the multilayers was studied using Glancing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy and Transmission Electron Microscopy (TEM). GIXRD reveal the crystallization of Si and SiC, when annealing temperatures exceed 900°C. The crystallization of Si and SiC was confirmed by TEM bright field imaging and electron diffraction. Annealing at 900°C, leads to the formation of Si NCs with a size of 3 nm, whereas the SiC NCs also have a size of 3 nm. However, a large amount of Si is still amorphous as shown by Raman spectroscopy. Annealing at temperatures exceeding 900°C reduces the amorphous phase and a further growth of Si NCs occurs.