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193 nm laser induced luminescence in oxide thin films

: Heber, J.; Mühlig, C.; Triebel, W.; Danz, N.; Thielsch, R.; Kaiser, N.


Applied physics. A (2002), Nr.75/5, S.637-640
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396 (Print)
ISSN: 1432-0630 (Online)
Fraunhofer IOF ()
dielectric thin films; optical properties of bulk materials and thin film; photoluminescence

Time resolved luminescence experiments have been set up in order to study the interaction of 193 nm laser radiation with dielectric thin films. At room temperature, Al2O3 coatings show photoluminescence upon ArF excimer laser irradiation with significant intensity contribution besides known substrate emission. Time and energy resolved measurements indicate oxygen defect centers in Al2O3 coatings, which suggest a strong single photon interaction at 193 nm by F+ and F center absorption. Measurements on high reflective thin film stacks, consisting of quarter wave Al2O3 and SiO2 layers, indicate similar UV excitations mainly from color centers of Al2O3.