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InAs/GaSb superlattice technology

: Rutz, F.; Rehm, R.; Walther, M.; Schmitz, J.; Kirste, L.; Wörl, A.; Masur, J.-M.; Schreibner, R.; Ziegler, J.


Infrared physics and technology 54 (2011), Nr.3, S.237-242
ISSN: 1350-4495
International Conference on Quantum Structure Infrared Photodetector (QSIP) <2010, Istanbul>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
InAs/GaSb superlattice; infrared focal plane array; MWIR; dual-color; wafer inspection

We present the InAs/GaSb type-II superlattice dual-color technology developed at Fraunhofer IAF. This includes insights into some of the test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met. Much effort is put in improving and monitoring the quality of the substrate and the epilayers. We also present performance data from a dual-color mid-wavelength infrared (MWIR) camera which incorporates the latest backside process technology.