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Doping- and carrier concentration profile characterisation of highly phosphorus-doped emitters

: Werner, S.; Belledin, U.; Kimmerle, A.; Fallisch, A.; Wolf, A.; Biro, D.

Volltext urn:nbn:de:0011-n-1592594 (560 KByte PDF)
MD5 Fingerprint: 3f6bcd8497ff1668952896c89d41ae6e
Erstellt am: 4.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

In this work we use Secondary Ion Mass Spectrometry (SIMS), Spreading Resistance Analysis (SRA), Stripping Hall (SH) and Electrochemical Capacitance Voltage (ECV) measurements to analyse different phosphorus-diffused emitters. Such data permit the detailed characterisation of the emitter and facilitate an optimisation of the diffusion process. The measurement techniques provide depth resolved information about the phosphorus concentration and the conductivity as well as the electron concentration and mobility. We include an overview of the different measurement techniques. A comparison of the obtained profiles confirms the presence of electrically inactive phosphorus and demonstrates differences in the surface concentration and the p-n-junction depth, which can be mainly attributed to measurement artefacts. However, a good agreement of all techniques is found.