Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Determining the minority carrier lifetime in epitaxial silicon layers by micro-wave-detected photoconductivity measurements

: Walter, D.; Rosenits, P.; Kopp, F.; Reber, S.; Berger, B.; Warta, W.

Volltext urn:nbn:de:0011-n-1592584 (548 KByte PDF)
MD5 Fingerprint: 9eb3f3cd36b760324378ad6085b14e5f
Erstellt am: 4.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Kristalline Silicium-Dünnschichtsolarzellen; Charakterisierung von Prozess- und Silicium-Materialien; Kristalline Silicium- Dünnschichtsolarzellen; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Measurements of effective lifetimes on epitaxial silicon thin-film material have been carried out. Two different methods were used for this purpose: one is the well established Microwave-Detected Photoconductivity Decay (µPCD) method as commercially available from Semilab, and second the more recent Microwave-Detected Photoconductivity (MDP) method introduced by Freiberg Instruments. Both methods are critically analyzed and compared in regard to their applicability in the sector of epitaxial silicon layers. The investigation includes a modeling of the expected measurement signal for both measurement conditions. The results, obtained from a large number of lifetime samples investigated in this study and consisting of different qualities of the silicon substrate as well as different qualities of the epitaxial layer, support the conclusion that both of the above mentioned methods may be used to determine the effective lifetime of a silicon thin-film sample.