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Surface texturing for crystalline silicon wafers with wafer thickness down to 100 µm

: Souren, F.M.M.; Sanden, M.C.M. van de; Seiffe, J.; Rentsch, J.

Volltext urn:nbn:de:0011-n-1592422 (290 KByte PDF)
MD5 Fingerprint: 13e86e0a5a439a7556abc9f5970efffd
Erstellt am: 20.12.2014

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle; Produktionsanlagen und Prozessentwicklung

In the photovoltaic industry light trapping by front and rear side texturing is an increasing important issue with decreasing wafer thickness down to 100 µm for saving costs. In this study the impact of backside texturing by application of the Linear Microwave Plasma (LMP) technique in a SF6/O2 plasma chemistry has been investigated. The textured surfaces have been characterized in terms of statistical roughness parameters and the scatter angle distribution function using atomic force microscopy (AFM). Moreover, the reflection and transmission have been determined using an integrating sphere setup. In addition reflection, transmission and absorption have been investigated for the dielectric passivation system which consists of a-SiNx:H front side passivation and AlOx-SiOx rear surface passivation as well as for the multiple layer system which consists of the dielectric passivation system including an aluminium rear side metallization corresponding to the complete solar cell.