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Kristalline Siliciumschicht auf einem Substrat, Verfahren zu deren Herstellung und Verwendung

Producing crystalline silicon layer on substrate, by depositing metal layer onto the substrate, depositing silicon layer onto the metal layer, and zone-guided heating silicon layer at specified temperature below melting point of silicon
 
: Janz, S.; Lindekugel, S.; Reber, S.

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Frontpage ()

DE 102009031357 A: 20090701
DE 102009031357 A: 20090701
H01L0021
C30B0013
H01L0031
Deutsch
Patent, Elektronische Publikation
Fraunhofer ISE ()

Abstract
(A1) Die Erfindung betrifft ein Verfahren zur Herstellung einer kristallinen Siliciumschicht auf einem Substrat, bei der eine Abscheidung einer Metallschicht auf einem Substrat und anschliessende Abscheidung einer Siliciumschicht auf der Metallschicht erfolgt. Im Anschluss wird eine zonengefuehrte Erwaermung der Siliciumschicht durchgefuehrt und schliesslich die Metallschicht abgetragen. Erfindungsgemaess wird ebenso die so hergestellte kristalline Siliciumschicht bereitgestellt. Verwendung findet das erfindungsgemaesse Verfahren zur Herstellung von Sensoren, Silicium-basierten Leuchtdioden, Flachbildschirmen oder optischen Filtern.

 

DE 102009031357 A1 UPAB: 20110224 NOVELTY - The method to produce a crystalline silicon layer (3) on a substrate (1), comprises depositing a metal layer onto the substrate, depositing a silicon layer onto the metal layer, zone-guided heating the silicon layer at a temperature below the melting point of silicon using a heating source for recrystallization of the silicon layer, and removing the metal layer. The silicon layer contains amorphous or microcrystalline silicon, and is doped with boron, phosphorus, arsenic, gallium or antimony and/or partially alloyed with germanium. The heating step is carried out in a zone heating furnace. DETAILED DESCRIPTION - The method for producing a crystalline silicon layer (3) on a substrate (1), comprises depositing a metal layer onto the substrate, depositing a silicon layer onto the metal layer, zone-guided heating the silicon layer at a temperature below the melting point of silicon using a heating source for recrystallization of the silicon layer, and removing the metal layer. The silicon layer contains amorphous or microcrystalline silicon, and is doped with boron, phosphorus, arsenic, gallium or antimony and/or partially alloyed with germanium. The heating step is carried out in a zone heating furnace. The heating source includes electron beam heater, laser beam sources, graphite strip heater, halogen lamp heater, infrared radiator and ultraviolet radiator. The heat sources are provided with focusing mirror. A temporal and/or local temperature gradient is held during the heating step. During heating step, a relative movement of substrate to the heat source takes place, in which the heat source is moved to a stationary substrate or heat source and the substrate are moved. The removing step takes place by wet-chemical etching, plasma etching and/or mechanical polishing. An epitaxial thickening of the exposed silicon layer is carried out by chemical gas phase deposition at atmospheric pressure or low pressure, molecular beam epitaxy, laser-assisted recrystallization, solid body recrystallization or interior beam-supported coating. An INDEPENDENT CLAIM is included for a crystalline silicon layer. USE - Method for producing a crystalline silicon layer on a substrate, useful in the field of photovoltaic, and for producing sensors, silicon-based light-emitting diodes, flat panel displays or optical filters (all claimed). ADVANTAGE - The method ensures rapid and effective production of the crystalline silicon layer on the substrate with long-term stability.

: http://publica.fraunhofer.de/dokumente/N-159191.html