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Improved emitters by dry etching

: Seiffe, J.; Khandelwal, R.; Clement, C.; Jäger, U.; Hofmann, M.; Rentsch, J.; Preu, R.

Volltext urn:nbn:de:0011-n-1591168 (76 KByte PDF)
MD5 Fingerprint: 9e1eca88c9557d7b34c7ceaf287a83b4
Erstellt am: 4.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen

A selective emitter by means of lowly doped regions with a low saturation current between the contact fingers and highly doped regions below the fingers can significantly improve the cell efficiency of crystalline silicon solar cells. A low saturation current could be achieved for diffused emitters by etching back the surface layer containing the high concentration of electrical inactive phosphorous ("dead-layer"). The significant benefit of performing this etch-process with plasma is the possibility to include it in one vacuum chamber with a subsequent anti-reflection coating (ARC). In this work a homogeneous etch-back of the emitter by means of SF6-plasma-etching is presented. The passivation quality of a silicon nitride ARC and of a silicon-rich silicon oxynitride / silicon nitride double layer ARC deposited on plasma-etched emitters is investigated. Emitter saturation currents down to J0e = 57 fA/cm2 are achieved.