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2D modeling of the iron concentration from crystallization to final firing of mc silicon solar cells

: Schön, J.; Schubert, M.C.; Habenicht, H.; Warta, W.

Volltext urn:nbn:de:0011-n-1581770 (307 KByte PDF)
MD5 Fingerprint: af06b18977e9bdcc1ce6be88c22412c4
Erstellt am: 3.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module; Feedstock; Kristallisation und Wafering

The behavior of iron in multicrystalline silicon during solar cell processing is analyzed by spatially resolved measurements and a 2-dimensional physical modeling. Previously used models for internal gettering in multicrystalline silicon, phosphorus diffusion gettering and aluminum gettering were improved and combined. The simulations for different iron contamination levels are in good consistency with the spatially resolved measurements of the Fei concentrations. The simulations can be used for optimization of the solar cell processes regarding to the iron distribution. The effect of a 550°C gettering step after phosphorus diffusion on the Fei concentration of the solar cell is simulated. For wafers intentionally contaminated with iron the Fei concentrations increase during contact firing above 860°C in the simulations and the experiments.