Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Aluminium-doped p+ silicon for rear emitters and back surface fields: Results and potentials of industrial n- and p-type solar cells

 
: Schmiga, C.; Rauer, M.; Rüdiger, M.; Meyer, K.; Lossen, J.; Krokoszinski, H.-J.; Hermle, M.; Glunz, S.W.

:
Volltext urn:nbn:de:0011-n-1581720 (741 KByte PDF)
MD5 Fingerprint: 93a674ee51b3d518da0c7907d8a0bd9d
Erstellt am: 3.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
S.1163-1168
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Herstellung und Analyse von hocheffizienten Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
We compare identically processed n- and p-type silicon solar cells with each other featuring aluminium-doped p+ regions on the rear made from screen-printed paste and acting as emitter or back surface field, respectively. We investigate near-industrial large-area n+np+ rear junction and n+pp+ front junction cells and discuss three cell concepts with different rear side structures: (i) For solar cells with a full-area non-passivated Al-p+ rear, we demonstrate similar performances on n- and p-type float-zone Si material with efficiencies of 18.6 % and 18.4 %, respectively. For our best n-type cell with a rear Al emitter coverage of 100 %, we have achieved a record-high efficiency of 19.3 %. (ii) For solar cells with a full-area and surface-passivated Al-p+ rear, we have obtained an increase in the open-circuit voltage of 10 mV and in the short-circuit current density of 1.5 mA/cm2. (iii) For solar cells with laser-fired Al-p+ points in the passivated rear Si surface, we have reached an efficiency of 19.6 % for a ptype LFC cell.

: http://publica.fraunhofer.de/dokumente/N-158172.html