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Determining the minority carrier lifetime in crystalline silicon thin-film material

: Rosenits, P.; Kopp, F.; Walter, D.; Reber, S.; Warta, W.

Volltext urn:nbn:de:0011-n-1581627 (180 KByte PDF)
MD5 Fingerprint: 414486492f99feec03000524016af7a6
Erstellt am: 4.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Kristalline Silicium-Dünnschichtsolarzellen; Charakterisierung von Prozess- und Silicium-Materialien; Kristalline Silicium- Dünnschichtsolarzellen; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

In this contribution the minority carrier lifetime in the electrically active epitaxial layer of crystalline silicon thin-film material is investigated. The effective lifetime is successfully determined for a wide range of different material qualities by means of microwave-detected photoconductance decay measurements. Subsequently, an approach of separating the epitaxial bulk lifetime and recombination at the interface (between the epitaxial base and the substrate) is presented. Finally, cell results from crystalline silicon thin-film solar cells are shown and discussed. Based on these results, it is suggested that the cell process limits the performance of the cells, not the electrical quality of the epitaxial layer. This statement is corroborated by results from cell simulation.