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MOVPE growth of III-V solar cells on silicon in 300 mm closed coupled showerhead reactor

: Roesener, T.; Döscher, H.; Beyer, A.; Brückner, S.; Klinger, V.; Wekkeli, A.; Kleinschmidt, P.; Jurecka, C.; Ohlmann, J.; Volz, K.; Stolz, W.; Hannappel, T.; Bett, A.W.; Dimroth, F.

Volltext urn:nbn:de:0011-n-1581568 (425 KByte PDF)
MD5 Fingerprint: d3889c69a0c4eb0d8a5415e949c63480
Erstellt am: 8.8.2014

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Epitaxie MOVPE

III-V multi-junction solar cells grown on Ge substrates have achieved the highest solar cell conversion efficiency of 41.6 %. However, this device manufacturing is still costly and a major share of the cost can be attributed to the cost of the Ge substrate. Therefore, a replacement of Ge by Si would be beneficial. However, elaborate challenges arise from the 4.1% difference in lattice constant for Si and GaAs and due to the non-polar to polar interface leading to threading dislocations and anti-phase domains, respectively. To meet the required high crystalline quality for III-V multi-junction solar cells this paper presents approaches for the Si-to-GaAs transition evaluated on an industrial 300 mm CRIUS Closed Coupled Showerhead MOVPE reactor. Anti-phase domain free GaP nucleation layers with only 0.36% lattice mismatch at room temperature were grown on Si substrate. On top of these layers step-graded Ga1-xInxP buffer structures mediate the lattice constant to GaAs although present process parameters have not yet enabled confinement of threading dislocations inside the buffer structure. A promising alternative route is the growth of an all Ge buffer layer directly on Si. Here we report on the results of the used twostep growth process.