Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Industrial deposition of PECVD AIOx for rear passivation of PERC-type mc-SI solar cells

 
: Rentsch, J.; Sperlich, H.-P.; Kohn, N.; Kania, D.; Saint-Cast, P.; Schetter, C.; Hofmann, M.; Preu, R.

:
Volltext urn:nbn:de:0011-n-1581525 (205 KByte PDF)
MD5 Fingerprint: 72ca1fbe74952a6686c2388e0f8bf5d4
Erstellt am: 4.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
S.1715-1718
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Messtechnik und Produktionskontrolle; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

Abstract
Passivated and locally rear contacted solar cell concepts are currently leaping forward towards industrial realization. A promising candidate for rear passivation represents the deposition of aluminum oxide (AlOx) by means of plasma enhanced chemical vapor deposition (PECVD) techniques. High deposition rates, high gas utilization and good achievable layer homogeneities attract considerable interest for an industrial use of these types of layer systems. The paper reports on current activities towards an industrial implementation of PECVD deposited AlOx layers for rear passivation of multicrystalline silicon (mc-Si) solar cells. On large area PERC type mc-Si solar cells, an increase in Voc of about 1.5 % relative and in jsc of about 2.5 % relative compared to standard Al-BSF reference cells could be demonstrated, demonstrating the optical and electrical quality gain at the wafers rear side.

: http://publica.fraunhofer.de/dokumente/N-158152.html