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Non-destructive characterization of strontium bismuth tantalate films

Zerstörungsfreie Charakterisierung von SBT-Schichten
: Petrik, P.; Khanh, N.Q.; Horvath, Z.E.; Zoknai, P.Z.; Barsony, I.; Lohner, T.; Freid, M.; Guylai, J.; Schmidt, C.; Schneider, C.; Ryssel, H.


Materials Science in Semiconductor Processing 5 (2002), S.141-145
ISSN: 1369-8001
Fraunhofer IIS B ( IISB) ()
SBT; Strontium-Wismut-Tantalat; MOCVD; Spektralellipsometrie; RBS; XRD

Optical,compositional,and structural properties ofstrontium bismuth tantalate (SBT)fi lms deposited in a high throughput low-pressure chemical vapor deposition reactor using liquid metal-organic precursors were characterized using three non-destructive techniques,spectroscopic ellipsometry (SE),Rutherford backscattering spectrometry (RBS),and X-ray diffraction (XRD).The thicknesses and the refractive indices of the SBT layers were calculated with SE using different parametric dielectric function models.The samples were characterized with RBS using different tilt angles and probe ions to enhance the depth resolution and the mass separation.Comparison with SE measurements supports the results of Bahng et al. revealing an increasing refractive index (n with increasing Bi/Sr ratio. The decreasing grain size measured by XRD was re fl ected as a decrease of n in the SE measurement.We show that RBS, XRD,and SE supply a wide range of information about the SBT layers,which can be us ed for quali fi cation as well as for feedback to layer production.The results suggest that by SE,being used as in situ or in line characterization tool,the control ofeven complex MOCVD deposition looks feasible.