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Investigation of the minority carrier lifetime reduction during industrial DC-sputtering of metal seed layers

 
: Reinwand, D.; Graf, M.; Hartmann, P.; Preu, R.; Trassl, R.

:
Volltext urn:nbn:de:0011-n-1567865 (206 KByte PDF)
MD5 Fingerprint: 4afb0ade885cbee0e6f7e1228e852361
Erstellt am: 9.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
S.1908-1911
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen

Abstract
This works presents the first results of the investigation of the minority carrier lifetime reduction during industrial sputtering of metal seed layers for front side metallization of crystalline silicon solar cells with respect to the cathode performance and the exposure time. Furthermore a method to avoid the reduction of the effective lifetime during sputtering is demonstrated as well as the determination of the ion energy input with the retarding field analysis. All investigations were done by using a new pilot system for inline sputtering. Because of the deposition from below different concepts for substrate holders were used to minimize shadowing effects. Compared to previous investigations a possibility to avoid the lifetime reduction was determined. This underlines the possibility of sputtering for front side metallization.

: http://publica.fraunhofer.de/dokumente/N-156786.html