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Purified steam for industrial thermal oxidation processes

 
: Mack, S.; Biro, D.; Wolf, A.; Thaidigsmann, B.; Walczak, A.; Spiegelman, J.J.; Preu, R.

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Volltext urn:nbn:de:0011-n-1567599 (72 KByte PDF)
MD5 Fingerprint: 9dfa308cc9629fd7c660b8380c00ce71
Erstellt am: 10.8.2012


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.5 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
S.3527-3530
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Solarthermie; Pilotherstellung von industrienahen Solarzellen

Abstract
Silicon surfaces are very effectively passivated by silicon thermal oxides. Silicon thermal oxides are grown in a dry oxygen atmosphere or in steam, whereas the thermal oxide growth rate is about one order of magnitude higher for a steam ambient. This considerably reduces the process time and cost. State of the art pyrox systems generate steam by pyrolysis of hydrogen and oxygen gas. A new approach is the purification of vaporized deionized water. In this work, we present a direct comparison of both systems. Additionally both systems are connected to the same quartz oxidation tube. The higher steam saturation of the steam purifying device results in a 20% higher growth rate. Nevertheless, on low resistivity p-type substrates, after a forming gas anneal an excellent surface recombination velocity of around 25 cm/s is found for thermal oxides grown with each of the systems. Moreover, 110 ?m thick thermal oxide rear surface passivated silicon solar cells show similar efficiencies of 18%, irrespective of the applied steam generation technology.

: http://publica.fraunhofer.de/dokumente/N-156759.html