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Cause of increased currents under reverse-bias conditions of upgraded metallurgical grade multicrystalline silicon solar cells

: Kwapil, W.; Wagner, M.; Schubert, M.C.; Warta, W.

Volltext urn:nbn:de:0011-n-1564494 (1.1 MByte PDF)
MD5 Fingerprint: f4c549b4cfa9fe8a549339721276c654
Erstellt am: 3.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.1 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Herstellung und Analyse von hocheffizienten Solarzellen; Kristalline Silicium- Dünnschichtsolarzellen

Solar cells made of upgraded metallurgical grade (UMG) silicon in general suffer from increased reverse currents at relatively low reverse bias easily attainable in standard solar cell modules. We show that the high net doping concentration, often inherent to UMG-Si feedstock, causes the reduction of the diode breakdown voltage of the soft breakdown. This type of breakdown occurs at recombination active defects which are omnipresent in multicrystalline silicon. We explain this behavior by the enhancement of the electric field around metal precipitates forming Schottky junctions with the surrounding semiconductor, which is consistent with known diode breakdown mechanisms based on large electric fields in the space charge region of the pn junction.