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Development of radiation hard Ga0.50In0.50P/Ga0.99In0.01As/Ge space solar cells with multi quantum wells

: Kellenbenz, R.; Hoheisel, R.; Kailuweit, P.; Guter, W.; Dimroth, F.; Bett, A.W.

Volltext urn:nbn:de:0011-n-1564290 (183 KByte PDF)
MD5 Fingerprint: d52832f460907a827f065648e1c1da28
Erstellt am: 8.8.2014

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.1 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

The efficiency of today's Ga0.5In0.5P/Ga0.99In0.01As/Ge triple-junction space solar cells can be improved by the incorporation of multi-quantum wells to extend the absorption of the GaInAs middle cell. In this paper, the effect of high energy electron irradiation on the device performance of quantum well single- and triple-junction devices was investigated. For GaAs single-junction solar cells it could be shown that the degradation is predominantly in voltage and not in current as for conventional p-n solar cells. This result was also confirmed for triple-junction quantum well solar cells. An excellent remaining factor in short-circuit current density of over 97% was measured after irradiation with 1 MeV electrons at a fluence of 10(exp 15) cm-2. Also the remaining factor for V(ind oc) was high with 91%. However, the fillfactor of this cell degraded 20% leading to a low overall end of life (EOL) efficiency. This may be due to a low shunt resistance of the device.