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Single side polish etching for the rear side of crystalline silicon wafers

: Kästner, G.; Zimmer, M.; Birmann, K.; Souren, F.M.M.; Rentsch, J.; Preu, R.

Volltext urn:nbn:de:0011-n-1564267 (341 KByte PDF)
MD5 Fingerprint: 0731d0fce053b2a00a26cdf0b026b95c
Erstellt am: 11.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle; Produktionsanlagen und Prozessentwicklung

Standard silicon solar cells have a textured front and rear side. In order to optimize the light trapping within the cell and the conditions for a good rear side passivation with local contacts, a planar rear surface is most suitable. The different structured front and rear surfaces of the wafer make the implementation of a single side etching process step essential. The main focus in this study is etching a planar rear surface with industrial standard applications based on a textured surface. With isotropic etch behaviour and high etch rates, which are preferred for inline processes, acidic measures are used to flatten the rear surface of the wafer. Mono- and multicrystalline wafers have been etched by obtaining a weighted reflection of about 35%. A successful single side polish etching after texturization requires a high silicon removal (10 to 30 µm). This process was already successfully transferred to an industrially deployable highly efficient cell design.