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Photoluminescence imaging of chromium in crystalline silicon

: Habenicht, H.; Schubert, M.C.; Coletti, G.; Warta, W.

Volltext urn:nbn:de:0011-n-1563886 (160 KByte PDF)
MD5 Fingerprint: 930cc2bdba8b5c07779cbb01e963dc95
Erstellt am: 9.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.3 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Industrielle und neuartige Solarzellenstrukturen

In this work a method for the quantitative and spatially resolved detection of dissolved chromium is presented. For the quantitative evaluation of the Cri concentration the defect parameters (capture cross sections and energy levels) for Cri and CrB from literature are reviewed and compared to measurements. The method is applied to mono- and multicrystalline samples with different doping and Cr contamination levels. From the significant difference of the lifetime observed in both Cr states a quantitative image of the interstitial chromium concentration has been deduced and compared to predictions for Cr-distribution in ingots. The association time of the CrB formation process is determined by time dependent measurements. Reasonable agreement is found with other published data. Based on spatially resolved Cri-images conclusions of the distribution of dissolved Cr with respect to grains, dislocation clusters and grain boundaries are drawn which exemplify the value of this new method.