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Recombination activity enhancement by stress in silicon

: Gundel, P.; Schubert, M.C.; Heinz, F.D.; Warta, W.

Volltext urn:nbn:de:0011-n-1563815 (922 KByte PDF)
MD5 Fingerprint: 21464a60bb5982ceee98fef705ce830e
Erstellt am: 10.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.3 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Produktionsanlagen und Prozessentwicklung

The recombination activity of grain boundaries and precipitate colonies is analyzed with submicron spatial resolution and compared to the surrounding stress field. This analysis reveals a positive correlation between tensile stress and recombination activity and a negative correlation between compressive stress and recombination activity. This correlation can be explained by the stress induced mobility enhancement due to the strong piezoresistance of silicon. This observation could lead to a significant improvement of multicrystalline silicon solar cells by engineering the incorporated stress fields during the block casting and the solar cell processing.