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Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence

: Giesecke, J.A.; Walter, D.; Kopp, F.; Rosenits, P.; Schubert, M.C.; Warta, W.

Volltext urn:nbn:de:0011-n-1563692 (230 KByte PDF)
MD5 Fingerprint: dce03af18b4e8f0ec2bd084d063b7413
Erstellt am: 11.8.2012

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
35th IEEE Photovoltaic Specialists Conference, PVSC 2010. Vol.2 : Honolulu, Hawaii, USA, 20 - 25 June 2010
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-5890-5
ISBN: 978-1-4244-5891-2
ISBN: 978-1-4244-5892-9
Photovoltaic Specialists Conference (PVSC) <35, 2010, Honolulu/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.