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Investigation on the influence of the intensity profile on the doping quality in laser chemical processing (LCP)

: Fell, A.; Hopman, S.; Granek, F.

Volltext urn:nbn:de:0011-n-1563571 (375 KByte PDF)
MD5 Fingerprint: f03302995fc757062903cb868ecb3f49
Erstellt am: 20.12.2014

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Kontaktierung und Strukturierung; Produktionsanlagen und Prozessentwicklung

In this paper detailed investigations about the local doping by laser chemical processing (LCP), a liquid jet coupled laser applied to selective emitter formation, are presented. The focus is on the influence of the laser light intensity profile within the liquid jet cross section on the produced dopant distribution. The inhomogeneous intensity profile produced by the liquid jet being a multimode waveguide was quantitatively measured using a suitable camera setup. Then the measured intensity profile was exported to our existing numerical model, which was developed for the simulation of the basic physical effects of LCP. The simulation results are compared to experimentally produced doping profiles showing very good agreement. This means that the LCP doping process can be well described by our numerical model including the real intensity profile. Furthermore, the observation that an LCP doping effect occurs already at average fluence values below the theoretical threshold for melting of silicon is explained by the local super elevations of the intensity profile.