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Epitaxial lateral overgrowth with silicon over SiO2 with rapid thermal CVD for light trapping in crystalline silicon thin film solar cells

 
: Drießen, M.; Janz, S.; Reber, S.

:
Volltext urn:nbn:de:0011-n-1563540 (343 KByte PDF)
MD5 Fingerprint: 3e7ee9b8486f48e0287562bb9ac7d1b2
Erstellt am: 4.8.2012


European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
S.3598-3601
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Abstract
Epitaxial lateral overgrowth of patterned dielectric layers offers a possibility to increase current generation of crystalline silicon thin film solar cells based on the epitaxial wafer-equivalent concept. The dielectric is deposited on top of a silicon substrate. It causes reflections of light crossing the active layers of the solar cell grown by epitaxial lateral overgrowth on top of the dielectric layer. The quality of the active layers influences solar cell performance. By variation of opening patterns in SiO2 layers and of gas compositions and process temperatures during epitaxial deposition we aimed to isolate processes that lead to layers with preferably low defect densities. In case of smooth surfaces reflection measurements are performed that coincide with calculated predictions.

: http://publica.fraunhofer.de/dokumente/N-156354.html