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2010
Conference Paper
Titel
Epitaxial lateral overgrowth with silicon over SiO2 with rapid thermal CVD for light trapping in crystalline silicon thin film solar cells
Abstract
Epitaxial lateral overgrowth of patterned dielectric layers offers a possibility to increase current generation of crystalline silicon thin film solar cells based on the epitaxial wafer-equivalent concept. The dielectric is deposited on top of a silicon substrate. It causes reflections of light crossing the active layers of the solar cell grown by epitaxial lateral overgrowth on top of the dielectric layer. The quality of the active layers influences solar cell performance. By variation of opening patterns in SiO2 layers and of gas compositions and process temperatures during epitaxial deposition we aimed to isolate processes that lead to layers with preferably low defect densities. In case of smooth surfaces reflection measurements are performed that coincide with calculated predictions.