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Pathways towards p-type oxide layers for optoelectronic applications

: Szyszka, B.; Polenzky, C.; Loebmann, P.; Götzendorfer, S.; Elsaesser, C.; Körner, W.


Vincenzini, P.:
5th Forum on New Materials 2010. Proceedings. Pt.D: New Materials III : Part of CIMTEC 2010 - 12th International Ceramics Congress and 5th Forum on New Materials Montecatini Terme, Italy, June 13 - 18, 2010
Faenza: Techna, 2011 (Advances in science and technology 75)
ISBN: 978-3-908158-58-5
ISSN: 1662-0356
Forum on New Materials <5, 2010, Montecatini Terme>
International Ceramics Congress (CIMTEC) <12, 2010, Montecatini Terme>
Fraunhofer IST ()
p-type oxides; first principles density functional theory; sol-gel route; hollow cathode gas flow sputtering; Seebeck measurements

State of the art optoelectronic applications such as thin film solar cells, flat panel displays, and light emitting diodes suffer from the non-availability of p-type oxide materials on the industrial scale. Novel technologies such as transparent electronics, UV light emitting diodes, and improved thin film solar cells using wide band gap p-type oxide layers as front contact will be available once p-type oxide layers with proper layer and interface properties can be obtained on an industrial scale. In this paper, we report on our progress towards p-type oxide layers for industrial applications. We address the first principles density functional theory modeling of ZnO based layers where a pathway towards p-conductivity is seen taking the nitrogen doping of grain boundaries into account. The second part of the paper is on the synthesis of p-type Delafossite layers such as CuCr1-xAlxO2:Mg by Sol-Gel and CuCrO2 by hollow cathodes gas flow sputtering. We report on the deposition processes and film properties obtained. Both methods reveal p-type conductivity by means of Seebeck-coefficient measurements.