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Electron and hole accumulation in InN/InGaN heterostructures

: Lebedev, V.; Polyakov, V.M.; Knübel, A.; Aidam, R.; Kirste, L.; Cimalla, V.; Granzner, R.; Schwierz, F.; Ambacher, O.


Physica status solidi. C 8 (2011), Nr.2, S.485-487
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <37, 2010, Takamatsu>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAF ()
InN; field effect transistor; epitaxy; simulation

For high frequency field effect transistors, one of the promising approaches is to grow a very thin (<=10 nm) InN channel
pseudomorphically with low defect density between low lattice mismatched InGaN layers. The present work provides a comprehensive analysis of such structures by varying width of the InN well. Both experimental and theoretical approaches have been applied in order to optimize the InN potential well structure for a transistor operation.