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Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applications

: Hermann, S.; Ecke, R.; Schulz, S.; Gessner, T.


Microelectronic engineering 85 (2008), 10, S.1979-1983
ISSN: 0167-9317
European Workshop on Materials for Advanced Metallization (MAM) <12, 2008, Dresden>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer ENAS ()
Fraunhofer IZM ()

Our interest is the integration of carbon nanotubes (CNT) in electronic devices (IC, NEMS). In the scope of this work, we present a study on the preparation of the catalyst Ni particles from ultrathin films and the synthesis of carbon nanotubes by the chemical vapour deposition method. For the preparation, we use a cold-wall CVD reactor especially designed for handling samples up to a size of a 4” wafer. We show the influence of different process conditions like temperature, initial layer thickness of catalyst and substrate on particle formation characterized by scanning electron microscopy (SEM). We show that the optimization of process conditions in the catalyst preparation phase is constitutive for dense CNT films. Regarding the application of CNTs as electrical interconnects, we studied the arrangement of nanoparticles on Al and TiN supporting layer. Furthermore, we fabricated the first test structures for the selective growth of CNTs out of contact holes on a Cu/TiN metallization layer system.
The growth of multi-walled nanotubes (MWNTs) was performed with thermal CVD with ethylene as a precursor gas and hydrogen as supporting gas mixed in a nitrogen gas flow. The effects of growth condition on the quality and morphology of the CNTs were characterized by scanning electron microscopy, transmission electron microscopy (TEM) and Raman spectroscopy. The influence of temperature, gas composition and substrate on CNT growth will be presented. We managed to grow dense CNTs even at temperatures as low as 500 °C.