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2011
Journal Article
Titel
Influence of the pulse width for visible pulsed laser doping for crystalline solar cells using phosphosilicate glass
Abstract
To increase the conversion efficiency of silicon solar cells the creation of selective emitters is seen as an important step for improving existing production line cell efficiencies. By adding only one or a small number of additional processing steps into existing production lines, laser doping offers an attractive way of improving the cell efficiency significantly by 0.3-1% absolute. The selection of the proper laser parameters, such as wavelength, pulse length and laser power, allows control of the depth of the doping profile and the amount of laser-induced damage. This work deals with the possible processing parameters when using pulsed laser irradiation at 532 nm wavelength. The pulse width is varied in a range between 10 and 400 ns. The analysis shows no direct influence of the pulse width on emitter depth of sheet resistance; these properties are governed by the laser power. However, the data indicates a larger process window for long pulses.