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A comparative study on different textured surfaces passivated with amorphous silicon

: Montesdeoca-Santana, A.; Ziegler, J.; Lindekugel, S.; Jimenez-Rodriguez, E.; Keipert-Colberg, S.; Müller, S.; Krause, C.; Borchert, D.; Guerrero-Lemus, R.


Physica status solidi. C 8 (2011), Nr.3, S.747-750
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
European Materials Research Society (Spring Meeting) <2010, Strasbourg>
Symposium I "Advanced Silicon Materials Research for Electronic and Photovoltaic Applications <2, 2010, Strasbourg>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Servicebereiche; CalLab PV Cells; CalLab PV Modules; TestLab PV Modules; TestLab Solar Thermal Systems; Kalibrierlabor für Solarzellen (ISE CalLab); Kalibrierlabor photovoltaische Module (ISE CalLab); Testzentrum für Photovoltaik (TZPV); Prüfzentrum für thermische Solaranlagen (PZTS)

In this work it is studied the influence of different texturizations on minority carrier lifetime of n-type Fz silicon wafers passivated with thin amorphous silicon layers (a-Si:H). For amorphous-crystalline silicon based heterojunction solar cells a good light trapping is essential. Therefore a front side texturization is needed as it can increase the photocurrent due to its low reflectance. The interface between the amorphous emitter and the crystalline base plays an important role for two reasons: firstly, the micromorphic surface topology can generate different deposition regimes that results in different lifetimes, and secondly, the nanomorphic structure also show influences on the lifetime. We compare two different types of wet chemical texturizations by different carbonate solutions and a plasma texturization subsequently covered by a thin layer of a-Si:H by means of plasma-enhanced chemical vapor deposition. The surface morphology produced by the texturization on the silicon wafers is analyzed by scanning electron microscopy and atomic force microscopy. The quality of the passivation of the textured silicon surface by the a-Si:H deposition is evaluated by measuring minority carrier lifetimes with a microwave photo-conductance decay and quasi steady state photo-conductance devices.