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Developments trends in the field of wafer bonding technologies

: Wiemer, M.; Haubold, M.; Jia, C.; Wünsch, D.; Frömel, J.; Gessner, T.


ECS transactions 16 (2008), Nr.8, S.81-92
ISSN: 1938-5862 (print)
Electrochemical Society (Meeting) <214, 2008, Honolulu/Hawaii>
Fraunhofer ENAS ()
Fraunhofer IZM ()

One well established technology for the fabrication of 3D devices in microelectronics and micro system technology is wafer bonding. After an overview about the existing bonding techniques the presentation will address aspects like bonding with plasma pretreatment to reduce the bond temperature below 200°C, use of nanostructures for bonding, metal to metal bonding and integration of new materials to form special SOI substrates.